Pt/Ti/SiO2/Si

Specializes in providing Pt / Ti / SiO2 / Si wafer.

Specific specifications

Pt Layer : 150 nm

Ti Layer : 20 nm

SiO2 Layer: 300 nm

Specification of base silicon wafer

Si Wafer

Type/Dopant: P/BS

Orientation:<100>+/-0.5degree

Size: dia4” x 0.5 mm

Surface: one side polished

Resistivity: Not Available