LaAlO3

Lanthanum aluminate (LaAlO3) single crystal is currently the most important industrialized, large-size single crystal material for high-temperature superconducting thin film substrates. It is grown by the Czochralski method, and single crystals and substrates with a diameter of 2 inches and larger can be obtained. It matches well with high-temperature superconducting materials and lattices such as YBaCuO, has low dielectric constant and low microwave loss, so it is suitable for making high-temperature superconducting microwave electronic devices (such as high-temperature superconducting microwave filters in telecommunication). There are huge reality and potential application prospects.

CasCrysTech (CCT) provides high quality Lanthanum aluminate (LaAlO3 crystal to the clients.

Uses/Applications

Making high-temperature superconducting microwave electronic devices (such as high-temperature superconducting microwave filters in telecommunication).

Features/Benefits

Matches well with high-temperature superconducting materials and lattices such as YBaCuO;
Has low dielectric constant and low microwave loss.

  • Crystal Structure

    M6normal  temperature

    M3>435℃

    Lattice Constant

    M6 a=5.357A   c=13.22 A

    M3 a=3.821 A

    Melting Point

    2080℃

    Density

    6.52g/cm3

    Mohs Hardness

    6-6.5mohs

    Thermal Expansion

    9.4x10-6/K

    Dielectric Constants

    ε=21

    Secant Loss10GHz)

    3×10-4@300k,0.6×10-4@77k

    Color and Appearance

    To anneal and conditions differ from brown to brownish
    The polished substrate has natural twin domains.

    Chemical Stability

    Room temperature is not dissoluble in minerals, the temperature is greater than 150 ℃ in soluble h3po4

    Characteristics

    For microwave electron device

    Growth Method

    Czochralski

    Dimension

     

    10x3mm10x5mm10x10mm15x15mm20x15mm20x20mm

    Ф15,Ф20Ф1″Ф2″,Ф2.6″

    Thickness

    0.5mm1.0mm

    Polishing

    One side or two sides

    Orientation

    100  110  111

    Crystal Plane Orientation Accuracy

    ±0.5°

    Edge Orientation Accuracy

    Special requirements can reach within 1°

    Bevel Wafer

    According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.

    Surface Roughness

    Ra≤5Å5×5µm

    Package

    Class 100 clean bag, Class 1000 super clean room


  • Dimension
    10x3mm10x5mm10x10mm15x15mm20x15mm20x20mm; Ф15,Ф20Ф1″Ф2″,Ф2.6″.


    Thickness

    0.5mm1.0mm