NdGaO3

NdGaO3 is mainly used as a substrate for epitaxial film growth of high-temperature superconductors (such as YBCO) and magnetic materials. Because the lattice mismatch between NdGaO3 and YBCO is very small (~0.27%), and there is no structural phase change, a good quality film can be epitaxially grown on the NdGaO3 substrate.

CasCrysTech (CCT) provides high quality neodymium gallate (NdGaO3) Crystal Substrate crystal upon customer's requirements.

Uses/Applications

Mainly used as a substrate for epitaxial film growth of high-temperature superconductors (such as YBCO) and magnetic materials.

Features/Benefits

LLattice mismatch between NdGaO3 and YBCO is very small (~0.27%), and there is no structural phase change, a good quality film can be epitaxially grown on the NdGaO3 substrate.

  • Crystal Structure

    Orthogonal

    Lattice Constant

    a=5.43 Å, b=5.50 Å, c=7.71 Å

    Melting point

    1600℃

    Density

    7.57 (g/cm3)

    Dielectric Constants

    25

    Growth Method

    Czochralski

    Dimension

    10x3mm10x5mm10x10mm15x15mm20x15mm20x20mm

    Thickness

    0.5mm1.0mm

    Polishing

    One side or two sides

    Orientation

    <100  110  111

    Crystal Plane Orientation Accuracy

    ±0.5°

    Edge Orientation Accuracy

    Special requirements can reach within 1°

    Bevel Wafer

    According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.

    Surface Roughness

    Ra≤5Å5×5µm

    Package

    Class 100 clean bag, Class 1000 super clean room



  • Dimension

    10x3mm,10x5mm,10x10mm,15x15mm,20x15mm,20x20mm


    Thickness

    0.5mm,1.0mm