GaN
Gallium nitride belongs to the third generation of semiconductor material with hexagonal wurtzite structure. It has the characteristics of large forbidden band width, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness. It has broad application potential and good market prospects in the fields of high-brightness blue, green, purple and white light diodes, blue and purple lasers, and anti-radiation, high-temperature and high-power microwave devices.
CasCrysTech (CCT) provides high quality gallium nitride (GaN) crystal which can be customized upon customer's requirements.
Uses/Applications
It has broad application potential and good market prospects in the fields of high-brightness blue, green, purple and white light diodes, blue and purple lasers, and anti-radiation, high-temperature and high-power microwave devices.
Features/Benefits
It has the characteristics of large forbidden band width, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness.
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Type
Free Standing GaN Substrate
GaN on Al2O3
Composite Substrate
Item No.
FR-U-1010
FR-U-1015
FR-N-1010
FR-N-1015
FR-SI-1010
FR-SI-1015
FR-U-50
FR-N-50
FR-SI-50
FR-U-100
FR-N-100
GaN-CP-U-50S GaN-CP-U-100S
GaN-CP-N-50S GaN-CP-N-100S
Dimensions
10.0×10.5mm2, 10.0×15mm2, Φ50.8mm, Φ100mm, customized
Thickness
300 ± 25 µm, 350 ± 25 µm, 400 ± 25 µm, customized
entation
C-axis(0001) ± 0.25°
TTV
≤15 µm
BOW
≤20 µm
Conduction Type
N-type
N-type
Semi-Insulating
Be customized as the left items.
Resistivity(300K)
<0.5 Ω·cm
<0.05 Ω·cm
>106 Ω·cm
Dislocation Density
From 1 x 105 to 3 x 106 cm-2
Useable Surface Area
> 90%
Polishing
Front Surface: Ra < 0.2nm. Epi-ready
Back Surface: Fine ground.
Package
Class 100 clean bag, in single wafer containers, under a nitrogen atmosphere.
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Dimensions
10.0×10.5mm2, 10.0×15mm2, Φ50.8mm, Φ100mm, customized