GaSb single crystals can be used as substrate materials because of their lattice constants matching the lattice constants of various ternary and quaternary, III-V compound solid solutions with band gaps in the 0.8~4.3um wide spectral range. The limited mobility of GaSb lattice is greater than that of GaAs, making it a potential application prospect in the manufacture of microwave devices. Growth methods include LEC, VGF and VBG.
Be used as substrate materials。
Manufacture of microwave devices.
Lattice constants matching the lattice constants of various ternary and quaternary, III-V compound with band gaps in the 0.8~4.3um wide spectral range.
Limited mobility of GaSb lattice is greater than that of GaAs。
Carrier Concentration cm-3
Dislocation Density (cm-2)
According to customer needs, substrates with special orientation and size can be customized.
Surface roughness(Ra):<=5 Å
Atomic Particle Microscopy (AFM) test report can be provided.
One side or two sides
Class 100 clean bag, Class 1000 super clean room
Orientation and size can be customized.