GaSb

GaSb single crystals can be used as substrate materials because of their lattice constants matching the lattice constants of various ternary and quaternary, III-V compound solid solutions with band gaps in the 0.8~4.3um wide spectral range. The limited mobility of GaSb lattice is greater than that of GaAs, making it a potential application prospect in the manufacture of microwave devices. Growth methods include LEC, VGF and VBG.

Uses/Applications

Be used as substrate materials。
Manufacture of microwave devices.

Features/Benefits

Lattice constants matching the lattice constants of various ternary and quaternary, III-V compound with band gaps in the 0.8~4.3um wide spectral range.
Limited mobility of GaSb lattice is greater than that of GaAs。

  • Single Crystal

    Doping

    Conductivity Type

    Carrier Concentration cm-3

    Mobility (cm2/V.s)

    Dislocation Density (cm-2)

    Standard Substrate

    GaSb

    Intrinsic

    P

    (1-2)´1017

    600-700

    £1´104

    Φ2″×0.5mm

    Φ3″×0.5mm

    GaSb

    Zn

    P

    (5-100) ´1017

    200-500

    £1´104

     

    Φ2″×0.5mm

    Φ3″×0.5mm

    GaSb

    Te

    N

    (1-20)´1017

    2000-3500

    £1´104

    Φ2″×0.5mm

    Φ3″×0.5mm

    Dimension

    Dia50.8x0.5mm,10×10×0.5mm10×5×0.5mm

    According to customer needs, substrates with special orientation and size can be customized.

    Surface Roughness

    Surface roughness(Ra):<=5 Å
    Atomic Particle Microscopy (AFM) test report can be provided.

    Polishing

    One side or two sides

    Package

    Class 100 clean bag, Class 1000 super clean room


  • Dimension

    50.8x0.5mm,10×10×0.5mm、10×5×0.5mm


    Orientation and size can be customized.