SiC

N-type silicon carbide substrate material is an essential material to support the development of the power electronics industry. Its outstanding physical characteristics such as high-pressure resistance and high-frequency resistance can be widely used in high-power high-frequency electronic devices, electric vehicle PCU, photovoltaic inverter, rail transit power control system and other fields, and can play a role of reducing volume simplification system and improving power density.

CasCrysTech (CCT) provides high quality SiC(Silicon Carbide) crystal substrate which can be customized upon customer's requirements.CasCrysTech (CCT) provides high quality Silicon Carbide(SiC) crystals upon request from customers.

Uses/Applications

N-type silicon carbide substrate material is an essential material to support the development of the power electronics industry.
It can be used in high-frequency electronic devices, electric vehicle power control unit(PCU), photovoltaic inverter, rail transit power control system and other fields, and can play a role of reducing volume simplification system and improving power density.

Features/Benefits

It has outstanding physical characteristics such as high-pressure resistance and high-frequency resistance.

  • Parameters

    Growth Method

    Seed crystal sublimation method, PVT (Physical gas phase transfer)

    Crystal Structure

    Hexagonal

    Lattice Constant

    a=3.08 Å, c=15.08 Å  

    Marshalling Sequence

    ABCACB(6H), ABCBABCB(4H)

    Band gap

    2.93 eV

    Mohs Hardness

    9.2 (mohs)

    Thermal Conductivity @300K

    5 (W/ cmK)

    Dielectric Constant

    e(11)=e(22)=9.66  e(33)=10.33

    Conductor Type

    I

    N

    Dopant

    Undoped

    Vanadium

    Nitrogen

    Resistivity ohm.cm

    ˃ 1 x 107

    ˃ 1 x 105

    0.01-0.2

    Dimension

    5x5mm10x10mm15x15mm20x20mm

    Ø50.8, Ø100 mm, Ø150mm

    Thickness

    0.33/0.35/0.5mm,

    According to customer needs, substrates with special orientation and size can be customized.

    Polishing

    One side or two sides

    Orientation

    <0001>or  <0001>off 4.0º

    Orientation Tolerance

    ±0.5°

    Edge Orientation Accuracy

    Special requirements can reach within 1°

    Surface Roughness

    Ra<5Å5×5μm

    Package

    Class 100 clean bag, Class 1000 super clean room


  • Dimension

    5x5mm10x10mm15x15mm20x20mm; Ø50.8, Ø100 mm, Ø150mm


    Thickness

    0.33/0.35/0.5mm,

    According to customer needs, substrates with special orientation and size can be customized.