Germanium has good semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors, and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. They have high electron mobility and high hole mobility.
Ge substrates can be used in concentrated photovoltaic(CPV), outer-space solar-cell panel and high-bright light-emitting diode(LED) applications.
CasCrysTech (CCT) provides high quality Germanium(Ge) crystal which can be customized upon customer's requirements.
The high-quality Ge substrates can be used in concentrated photovoltaic(CPV), outer-space solar-cell panel and high-bright light-emitting diode(LED) applications.
Germanium is doped with trivalent elements to obtain P-type germanium semiconductors, and doped with pentavalent elements to obtain N-type germanium semiconductors. They have high electron mobility and high hole mobility.
Dia50.8 mm ,dia76.2mm, Dia100 mm
One side or two sides
Crystal Plane Orientation Accuracy
Edge Orientation Accuracy
2°（Special requirements can reach within 1°）
According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.
Class 100 clean bag, Class 1000 super clean room
Ø50.8 mm, Ø76.2mm, Ø100 mm