MgAl2O4

Magnesium aluminate (MgAl2O4) can be used as the substrate substrate of III-V nitride device thin film, and is also widely used in acoustic wave and microwave devices and fast IC epitaxial substrates. In addition, it has a good lattice matching with epitaxial silicon thin layer. The self-doping of aluminum atoms in the epitaxial silicon thin layer is small, the thermal stability is good, and the expansion coefficient of silicon is relatively close, the hardness is small, the processing performance is better, etc., so it can be used as a high-quality insulating lining for ultra-high-speed large-scale integrated circuits. One of the bottom materials. At present, CasCrysTech (CCT) can provide twin-free, crystal-domain-free, and ultra-smooth high-quality substrate substrates with a maximum diameter of 2 inches (FWHM<50 arcsec, roughness Ra<0.5 nm).


Uses/Applications

Magnesium aluminate (MgAl2O4) can be used as the substrate substrate of III-V nitride device thin film, and is also widely used in acoustic wave and microwave devices and fast IC epitaxial substrates.
It can be used as a high-quality insulating lining for ultra-high-speed large-scale integrated circuits One of the bottom materials.

Features/Benefits

Magnesium aluminate (MgAl2O4) has a good lattice matching with epitaxial silicon thin layer.
The self-doping of aluminum atoms in the epitaxial silicon thin layer is small, the thermal stability is good, and the expansion coefficient of silicon is relatively close, the hardness is small, the processing performance is better, etc.

  • Growth Method

    Czochralski

    Crystal Structure

    Cubic

    Lattice Constant

    a=8.085Å

    Melting Point

    2130℃

    Density

    3.64 (g/cm3)

    Mohs Hardness

    8 (mohs)

    Color

    White transparent

    Thermal Expansion

    7.45×10-6 /K

    Dimension

    10x3mm10x5mm10x10mm15x15mm20x15mm20x20mm


    Ф1″Ф2″,

    Thickness

    0.5mm1.0mm

    Polishing

    One side or two sides

    Orientation

    <100><110><111>±0.5º

    Crystal Plane Orientation Accuracy

    ±0.5°

    Edge Orientation Accuracy

    Special requirements can reach within 1°

    Bevel Wafer

    According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.

    Surface Roughness

    Ra≤5Å5×5µm

    Package

    Class 100 clean bag, Class 1000 super clean room


  • Dimension

    10x3mm,10x5mm,10x10mm,15x15mm,20x15mm,20x20mm

    Ф1″,Ф2″


    Thickness

    0.5mm,1.0mm