111 SiO2/Si composite substrate

SiO2/Si

Parameters 

1. Diameter: 2 ~ 8 inches.

2. Thickness of oxide layer: 50 Å - 20um3 Oxidized silicon wafer means that there is an oxide layer on the surface of silicon wafer, and the thickness of the oxide layer is customized according to the needs of users. The company keeps various models in stock and is processed by thermal oxidation of large-scale production oxidation furnace tubes.

3. The oxide layer with a thickness of 2um needs to be customized.

4. Different types of silicon oxide wafers are applicable according to the process application, and the process application needs to be informed during consultation.


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