As one of the most important compound semiconductor materials, Indium phosphide (InP) single crystal materials are key materials for the production of InP-based laser diodes (LD), light-emitting diodes (LEDs) and photodetectors in optical communications. These devices realize the emission of information in optical fiber communications, Dissemination, amplification, acceptance and other functions. InP is also very suitable for high-frequency devices, such as high electron mobility transistors (HEMT) and heterojunction bipolar transistors (HBT). Due to its superior characteristics, it is used in optical fiber communication, microwave, millimeter wave, Many high-tech fields such as radiant solar cells and heterojunction transistors. The main growth methods of InP single crystal materials include traditional liquid-sealed Czochralski technology (LEC), improved LEC technology, and gas pressure controlled Czochralski technology (VCZ). /PC-LEC)/Vertical Gradient Solidification Technology (VGF)/Vertical Bridgman Technology (VB), etc.
CasCrysTech (CCT) provides high quality Indium phosphide (InP) crystal which can be customized upon customer's requirements.
Key materials for the production of InP-based laser diodes (LD), light-emitting diodes (LEDs) and photodetectors in optical communications.
Suitable for high-frequency devices, such as high electron mobility transistors (HEMT) and heterojunction bipolar transistors (HBT).
Indium phosphide (InP) includes phosphorus and indium and is a binary semiconductor. It has a zincblende crystal structure similar to GaAs and almost all the III-V semiconductors.
Melting Point oC
Forbidden Band Width
Dislocation density (cm-2)
Orientation and size can be customized.
Surface roughness(Ra):<=5 Å
Atomic particle microscope ( AFM ) test report can be provided
One side or two sides
Class 100 clean bag, Class 1000 super clean room
Customized upon request.