InP

As one of the most important compound semiconductor materials, Indium phosphide (InP) single crystal materials are key materials for the production of InP-based laser diodes (LD), light-emitting diodes (LEDs) and photodetectors in optical communications. These devices realize the emission of information in optical fiber communications, Dissemination, amplification, acceptance and other functions. InP is also very suitable for high-frequency devices, such as high electron mobility transistors (HEMT) and heterojunction bipolar transistors (HBT). Due to its superior characteristics, it is used in optical fiber communication, microwave, millimeter wave, Many high-tech fields such as radiant solar cells and heterojunction transistors. The main growth methods of InP single crystal materials include traditional liquid-sealed Czochralski technology (LEC), improved LEC technology, and gas pressure controlled Czochralski technology (VCZ). /PC-LEC)/Vertical Gradient Solidification Technology (VGF)/Vertical Bridgman Technology (VB), etc.

CasCrysTech (CCT) provides high quality Indium phosphide (InP) crystal which can be customized upon customer's requirements.