Ga2O3
Rapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention.
β-Ga2O3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals.
CCT provides high-quality Ga2O3 substrate/wafers which can be customized upon the customer's request.
Uses/Applications
Promising for power switching device applications.
Features/Benefits
Extremely large breakdown electric field and availability of large-diameter.
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Crystal Structure
Monoclinic
Lattice Constant
a=12.23Å, b=3.04Å, c=5.80Å, ß=103.7°
Orientation
<100> ±1°, <010> ±1° ,<001> ±1°
Mohs Hardness
9 (mohs)
Density
5.88 (g/cm3)
Melting Point
1725℃
Dimension 3-220mm, customized upon request
Thickness
Customized upon request
Growth Method
Czochralski, HEM
Conduction Type
Semi-insulating, xx-doped (be customized)
Polishing
Epi-polished, RMS<0.5nm, or
optical ponished
Parallelism
15 arcsec
S/D 20/10 scratch/dig
Package Class 100 clean bag, in single wafer containers, under a nitrogen atmosphere. -
Diameter: 3-220mm
Thickness: 1-80mm
Customized upon request.