Rapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention.
β-Ga2O3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals.
CCT provides high-quality Ga2O3 substrate/wafers which can be customized upon the customer's request.
Promising for power switching device applications.
Extremely large breakdown electric field and availability of large-diameter.
a=12.23Å, b=3.04Å, c=5.80Å, ß=103.7°
<100> ±1°, <010> ±1° ,<001> ±1°
3-220mm, customized upon request
Customized upon request
Semi-insulating, xx-doped (be customized)
Epi-polished, RMS<0.5nm, or
Package Class 100 clean bag, in single wafer containers, under a nitrogen atmosphere.
Customized upon request.