Zinc oxide (ZnO) is a good substrate for GaN thin film. It has large exciton binding energy of 60 meV and a bandwidth of 3.73 eV at room temperature, making it a luminescent material for ultraviolet and visible light. Due to the transparency in the visible region, the large electrome-chanical coupling coefficient and the properties of adsorption and desorption of gas molecules on its surface, it is expected to be used in energy limiters with high peak energy, GaN substrates with large size and high quality, and wireless communications which beyond 5GHz in the future, high electric field equipment, high temperature and high energy electronic devices etc.
Luminescent material for ultraviolet and visible light.
High electric field equipment；
High temperature and high energy electronic devices.
High-efficiency semiconductor photoelectronic devices, semiconductor photocatalysis, and diluted magnetic semiconductors.
Large exciton binding energy of 60 meV;
Transparent in the visible region;
Large electrome-chanical coupling coefficient.
a=3.252Å c=5.313 Å
//a 6.5 x 10-6 /K //c 3.7 x 10-6 /K
0.125 cal /gm
1200 mv/K@ 300 ℃
0.4-0.6 um > 50% at 2mm
According to customer needs, substrates with special orientation and size can be customized.
Atomic Particle Microscopy (AFM) test report can be provided.
One side or two sides
Class 100 clean bag, Class 1000 super clean room
Costomized upon customer requirements.