111 AlN Ceramic wafer

AlN Ceramic

AlN ceramic substrate has high thermal conductivity, good electrical performance and non-toxic. It’s thermal expansion coefficient close to Si wafer, and it is an ideal material to replace BeO ceramics. It is mainly used in high-density hybrid circuits, microwave power devices, power electronic devices, optoelectronic components, semiconductor refrigeration and other products as high-performance substrate materials and packaging materials.

Item No.

Density(g/cm3)

Thermal Conductivity (W/m.K)

Thermal Expansion (x10-6/℃

Dielectric Strength(Kv/mm)

Dielectric Constant (at 1MHz)

Loss Tangent (x104@1 MHz)

Volume Resistivity (ohm—cm)

Flexural Strength (Kg/mm2)

SD5111

>3.20

80~100

<4.5

>15

9.0

3~10

>1013

>20

SD5113

>3.25

100~130

<4.3

>15

8.7

3~7

>1014

>25

SD5115

>3.25

140~170

<4.3

>15

8.7

3~7

>1014

>28

SD5116

3.26

>170

<4.2

>15

8.7

3~7

>1014

>30


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